{"title":"用于IEEE 802.11a无线局域网的5.25GHz 0.35um SiGe BiCMOS功率放大器","authors":"Xiao-Lin, Wen-Yuan Li, Zhigong Wang","doi":"10.1109/GSMM.2008.4534631","DOIUrl":null,"url":null,"abstract":"A 5.25 GHz linear power amplifier for Wireless LAN application has been realized in 0.35 mum SiGe BiCMOS technology. This paper presents a two-stage power amplifier operating at AB mode under a single supply of +3.3 v. A current mirror bias circuit is integrated to improve the linearity, efficiency, gain of the power amplifier. The result of simulation shows that the output 1 dB compression point (OP1 dB) is 26.3 dBm, the saturated output power achieves 28.5 dBm, the power added efficiency (PAE) at OP1 dB is about 20%, and the small signal gain is 28.3 dB at 3.3 v supply voltage.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 5.25GHz 0.35um SiGe BiCMOS Power Amplifier for IEEE 802.11a Wireless LAN\",\"authors\":\"Xiao-Lin, Wen-Yuan Li, Zhigong Wang\",\"doi\":\"10.1109/GSMM.2008.4534631\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 5.25 GHz linear power amplifier for Wireless LAN application has been realized in 0.35 mum SiGe BiCMOS technology. This paper presents a two-stage power amplifier operating at AB mode under a single supply of +3.3 v. A current mirror bias circuit is integrated to improve the linearity, efficiency, gain of the power amplifier. The result of simulation shows that the output 1 dB compression point (OP1 dB) is 26.3 dBm, the saturated output power achieves 28.5 dBm, the power added efficiency (PAE) at OP1 dB is about 20%, and the small signal gain is 28.3 dB at 3.3 v supply voltage.\",\"PeriodicalId\":304483,\"journal\":{\"name\":\"2008 Global Symposium on Millimeter Waves\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 Global Symposium on Millimeter Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GSMM.2008.4534631\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 Global Symposium on Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GSMM.2008.4534631","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 5.25GHz 0.35um SiGe BiCMOS Power Amplifier for IEEE 802.11a Wireless LAN
A 5.25 GHz linear power amplifier for Wireless LAN application has been realized in 0.35 mum SiGe BiCMOS technology. This paper presents a two-stage power amplifier operating at AB mode under a single supply of +3.3 v. A current mirror bias circuit is integrated to improve the linearity, efficiency, gain of the power amplifier. The result of simulation shows that the output 1 dB compression point (OP1 dB) is 26.3 dBm, the saturated output power achieves 28.5 dBm, the power added efficiency (PAE) at OP1 dB is about 20%, and the small signal gain is 28.3 dB at 3.3 v supply voltage.
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