M. Sazzadur Rahman, M. Kibria, T. Nakagawa, S. Mizuno
{"title":"Ni(111)表面硅吸附(√3 ×√3)R 30°相的表面结构研究及LEED结构测定","authors":"M. Sazzadur Rahman, M. Kibria, T. Nakagawa, S. Mizuno","doi":"10.1109/ICIEV.2015.7334025","DOIUrl":null,"url":null,"abstract":"The phase evolution of Si on Ni (111) was studied by LEED and AES. A new phase of Si on Ni (111) was found along with the previously reported (√3 × √3)R 30° phase. The surface structure of (√3 × √3)R 30° phase had determined, with chemical composition of Ni<sub>2</sub>Si, by using low-energy electron diffraction (LEED) analysis. The obtained nickel silicide would be helpful for understanding the formation of Schottky barrier at semiconductor-metal interface.","PeriodicalId":367355,"journal":{"name":"2015 International Conference on Informatics, Electronics & Vision (ICIEV)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Surface structure study and structure determination of (√3 × √3)R 30° phase of Si-adsorption on Ni(111) by LEED\",\"authors\":\"M. Sazzadur Rahman, M. Kibria, T. Nakagawa, S. Mizuno\",\"doi\":\"10.1109/ICIEV.2015.7334025\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The phase evolution of Si on Ni (111) was studied by LEED and AES. A new phase of Si on Ni (111) was found along with the previously reported (√3 × √3)R 30° phase. The surface structure of (√3 × √3)R 30° phase had determined, with chemical composition of Ni<sub>2</sub>Si, by using low-energy electron diffraction (LEED) analysis. The obtained nickel silicide would be helpful for understanding the formation of Schottky barrier at semiconductor-metal interface.\",\"PeriodicalId\":367355,\"journal\":{\"name\":\"2015 International Conference on Informatics, Electronics & Vision (ICIEV)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Conference on Informatics, Electronics & Vision (ICIEV)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIEV.2015.7334025\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Informatics, Electronics & Vision (ICIEV)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIEV.2015.7334025","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
采用LEED和AES研究了Si在Ni(111)上的相演化。除了先前报道的(√3 ×√3)r30°相外，还发现了一个新的Si on Ni(111)相。利用低能电子衍射(LEED)分析确定了(√3 ×√3)R 30°相的表面结构和Ni2Si的化学成分。所得的硅化镍有助于理解半导体-金属界面上肖特基势垒的形成。
Surface structure study and structure determination of (√3 × √3)R 30° phase of Si-adsorption on Ni(111) by LEED
The phase evolution of Si on Ni (111) was studied by LEED and AES. A new phase of Si on Ni (111) was found along with the previously reported (√3 × √3)R 30° phase. The surface structure of (√3 × √3)R 30° phase had determined, with chemical composition of Ni2Si, by using low-energy electron diffraction (LEED) analysis. The obtained nickel silicide would be helpful for understanding the formation of Schottky barrier at semiconductor-metal interface.
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