InP的磁稳定Kyropoulos和Czochralski生长

S. Bachowski, D. Bliss, B. Ahern, R. M. Hilton, J. Adamski, D. Carlson
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引用次数: 7

摘要

比较了磁液包封kyropoulos (MLEK)法和磁液包封czochralski (MLEC)法对InP体生长的影响。观察到磁场的作用改变了LEK和LEC的界面形状和掺杂分布。在适当的磁场强度下,可以减少掺杂物的条纹。相比之下,对于具有同质化的MLEK,当施加磁场时,条纹保持不变。然而,当MLEK在不旋转的情况下向下生长时,局部掺杂分布均匀,没有生长条纹。证实了MLEK在低梯度环境下生长产生低位错密度的晶体
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Magnetically stabilized Kyropoulos and Czochralski growth of InP
A comparison is made between the magnetic liquid-encapsulated-Kyropoulos (MLEK) method and the magnetic liquid-encapsulated-Czochralski (MLEC) method for bulk growth of InP. The application of a magnetic field was observed to alter the interface shape and doping distribution in both LEK and LEC. For MLEC with the proper magnetic field strength, dopant striations can be reduced. In contrast, for MLEK with corotation, striations remained unchanged when a magnetic field was applied. However, for MLEK growth down with no rotation a uniform local dopant distribution with no growth striations is apparent. It is confirmed that MLEK growth in a low-gradient environment yields low-dislocation-density crystals.<>
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