S. Bonnefont, S. Mariojouls, O. Gilard, C. Vergnenègre, F. Lozes-Dupuy
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引用次数: 0
摘要
由于采用了喇叭半导体激光放大器，在高功率衍射限制源方面取得了相当大的进展。增益电极沿放大器长度的加宽允许波在保持其放大水平的同时传播，并减少了光束细丝现象。这种器件的衍射极限功率高达1 W CW，但热效应会强烈影响其性能。
Analysis of Thermal Effects in Flared Semiconductor Laser Amplifiers
Considerable progress in high-power diffraction-limited sources has been made owing to the use of flared semiconductor laser amplifiers. The broadening of the gain electrode along the length of the amplifier allows the wave spreading while maintaining its amplification level, and reduces the beam filamentation phenomenon. Diffraction-limited powers as high as 1 W CW have been demonstrated from such devices, however thermal effects can strongly influence their performance.
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