一种功率和温度敏感的DRAM架构

Song Liu, S. Memik, Yu Zhang, G. Memik
{"title":"一种功率和温度敏感的DRAM架构","authors":"Song Liu, S. Memik, Yu Zhang, G. Memik","doi":"10.1145/1391469.1391691","DOIUrl":null,"url":null,"abstract":"Technological advances enable modern processors to utilize increasingly larger DRAMs with rising access frequencies. This is leading to high power consumption and operating temperature in DRAM chips. As a result, temperature management has become a real and pressing issue in high performance DRAM systems. Traditional low power techniques are not suitable for high performance DRAM systems with high bandwidth. In this paper, we propose and evaluate a customized DRAM low power technique based on page hit aware write buffer (PHA-WB). Our proposed approach reduces DRAM system power consumption and temperature without any performance penalty. Our experiments show that a system with a 64-entry PHA-WB could reduce the total DRAM power consumption by up to 22.0% (9.6% on average). The peak and average temperature reductions are 6.1degC and 2.1degC, respectively.","PeriodicalId":412696,"journal":{"name":"2008 45th ACM/IEEE Design Automation Conference","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"A power and temperature aware DRAM architecture\",\"authors\":\"Song Liu, S. Memik, Yu Zhang, G. Memik\",\"doi\":\"10.1145/1391469.1391691\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Technological advances enable modern processors to utilize increasingly larger DRAMs with rising access frequencies. This is leading to high power consumption and operating temperature in DRAM chips. As a result, temperature management has become a real and pressing issue in high performance DRAM systems. Traditional low power techniques are not suitable for high performance DRAM systems with high bandwidth. In this paper, we propose and evaluate a customized DRAM low power technique based on page hit aware write buffer (PHA-WB). Our proposed approach reduces DRAM system power consumption and temperature without any performance penalty. Our experiments show that a system with a 64-entry PHA-WB could reduce the total DRAM power consumption by up to 22.0% (9.6% on average). The peak and average temperature reductions are 6.1degC and 2.1degC, respectively.\",\"PeriodicalId\":412696,\"journal\":{\"name\":\"2008 45th ACM/IEEE Design Automation Conference\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 45th ACM/IEEE Design Automation Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1391469.1391691\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 45th ACM/IEEE Design Automation Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1391469.1391691","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15

摘要

技术进步使现代处理器能够利用越来越大的内存和不断上升的访问频率。这导致DRAM芯片的高功耗和高工作温度。因此,温度管理已成为高性能DRAM系统中一个现实而紧迫的问题。传统的低功耗技术不适合高带宽的高性能DRAM系统。本文提出并评估了一种基于页面命中感知写缓冲器(PHA-WB)的定制DRAM低功耗技术。我们提出的方法降低了DRAM系统的功耗和温度,而没有任何性能损失。我们的实验表明,采用64入口PHA-WB的系统可以将DRAM总功耗降低22.0%(平均为9.6%)。峰值降温6.1℃,平均降温2.1℃。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A power and temperature aware DRAM architecture
Technological advances enable modern processors to utilize increasingly larger DRAMs with rising access frequencies. This is leading to high power consumption and operating temperature in DRAM chips. As a result, temperature management has become a real and pressing issue in high performance DRAM systems. Traditional low power techniques are not suitable for high performance DRAM systems with high bandwidth. In this paper, we propose and evaluate a customized DRAM low power technique based on page hit aware write buffer (PHA-WB). Our proposed approach reduces DRAM system power consumption and temperature without any performance penalty. Our experiments show that a system with a 64-entry PHA-WB could reduce the total DRAM power consumption by up to 22.0% (9.6% on average). The peak and average temperature reductions are 6.1degC and 2.1degC, respectively.
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