基于动态应力的低温多晶硅TFTs可靠性评估方法

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095) Pub Date : 2000-03-13 DOI:10.1109/ICMTS.2000.844424

Y. Uraoka, T. Hatayama, T. Fuyuki

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引用次数: 3

摘要

提出了用动态应力评价低温多晶硅材料可靠性的方法。动态应力作用下，材料的迁移率和导通电流均有所下降。我们发现，这种退化在很大程度上取决于下降时间和重复次数。这种退化是由热电子主导的，可以通过采用LDD结构来改善。

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Reliability evaluation method of low temperature poly-silicon TFTs using dynamic stress

Evaluation method of reliability of low temperature poly-Si using dynamic stress is proposed. Decrease of mobility and ON current was observed under the dynamic stress. We have found that the degradation depends strongly on falling time and the number of repetition. This degradation is dominated by hot electrons and can be improved by adopting LDD structures.

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来源期刊

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)

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