EVOLUTION OF THE FIELD OF DISTRIBUTED DEFECTS IN A CRYSTAL DURING CONTACT INTERACTION WITH A SYSTEM OF RIGID STAMPS

The article discusses the mathematical modeling for the evolution of the stress-strain state and fields of defects in crystals during their contact interaction with a system of rigid punches. From a macroscopic point of view, the redistribution of defects is characterized by inelastic (viscoplastic) deformation, and therefore the processes under study can be classified as elastic-viscoplastic. Elastic and inelastic deformations are assumed to be finite. To take into account inelastic deformations, it is proposed to use a differential-geometric approach, in which the evolution of the fields of distributed defects is completely characterized by measures of incompatible deformations and quantified by material connection invariants. This connection is generated by a non-Euclidean metric, which, in turn, is given by a field of symmetric linear mappings that define (inconsistent) deformations of the crystal. Since the development of local deformations depends both on thecontact interaction at the boundary and on the distribution of defects in the bulk of the crystal, the simulation problem turns out to be coupled. It is assumed that the local change in the defect density is determined by the first-order Alexander Haasen Sumino evolutionary law, which takes into account the deviatoric part of the stress field. An iterative algorithm has been developed to find coupled fields of local deformations and defects density. The numerical analysis for the model problem was provided for a silicon crystal in the form of a parallelepiped, one face of which is rigidly fixed, and a system of rigid stamps acts on the opposite face. The three-constant Mooney Rivlin potential was used to model the local elastic response.