BiJFet阵列芯片MH2XA030 -一种抗辐射低温模拟集成电路的设计工具

2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2018-10-01 DOI:10.1109/EEXPOLYTECH.2018.8564415

O. Dvornikov, V. Dziatlau, V. Tchekhovski, N. N. Prokopenko, A. Bugakova

{"title":"BiJFet阵列芯片MH2XA030 -一种抗辐射低温模拟集成电路的设计工具","authors":"O. Dvornikov, V. Dziatlau, V. Tchekhovski, N. N. Prokopenko, A. Bugakova","doi":"10.1109/EEXPOLYTECH.2018.8564415","DOIUrl":null,"url":null,"abstract":"A new BiJFet array chip (AC) MH2XA030 designed to accelerate the creation of analog integrated circuits (ICs) that retain their performance under the influence of penetrating radiation (the flux of neutrons and fast electrons, the accumulated dose of radiation, the single effects from heavy charged particles) and extremely low temperatures (up to −197°C) is considered. The topology of the array chip and its macro cell is described. The schematic design features of radiation-hardened and cryogenic analog ICs based on the AC are indicated. The circuit simulation results of the main analog components of the AC - voltage comparator, two operational amplifiers and two differential difference operational amplifiers are given.","PeriodicalId":296618,"journal":{"name":"2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"BiJFet Array Chip MH2XA030 — a Design Tool for Radiation-Hardened and Cryogenic Analog Integrated Circuits\",\"authors\":\"O. Dvornikov, V. Dziatlau, V. Tchekhovski, N. N. Prokopenko, A. Bugakova\",\"doi\":\"10.1109/EEXPOLYTECH.2018.8564415\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new BiJFet array chip (AC) MH2XA030 designed to accelerate the creation of analog integrated circuits (ICs) that retain their performance under the influence of penetrating radiation (the flux of neutrons and fast electrons, the accumulated dose of radiation, the single effects from heavy charged particles) and extremely low temperatures (up to −197°C) is considered. The topology of the array chip and its macro cell is described. The schematic design features of radiation-hardened and cryogenic analog ICs based on the AC are indicated. The circuit simulation results of the main analog components of the AC - voltage comparator, two operational amplifiers and two differential difference operational amplifiers are given.\",\"PeriodicalId\":296618,\"journal\":{\"name\":\"2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EEXPOLYTECH.2018.8564415\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EEXPOLYTECH.2018.8564415","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 15

摘要

一种新的BiJFet阵列芯片(AC) MH2XA030设计用于加速模拟集成电路(ic)的创建，在穿透辐射(中子和快速电子的通量，辐射累积剂量，重带电粒子的单效应)和极低温度(高达- 197°C)的影响下保持其性能。描述了阵列芯片的拓扑结构及其宏单元。指出了基于交流的抗辐射低温模拟集成电路的原理图设计特点。给出了交流电压比较器、两个运算放大器和两个差分运算放大器的主要模拟元件的电路仿真结果。

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BiJFet Array Chip MH2XA030 — a Design Tool for Radiation-Hardened and Cryogenic Analog Integrated Circuits

A new BiJFet array chip (AC) MH2XA030 designed to accelerate the creation of analog integrated circuits (ICs) that retain their performance under the influence of penetrating radiation (the flux of neutrons and fast electrons, the accumulated dose of radiation, the single effects from heavy charged particles) and extremely low temperatures (up to −197°C) is considered. The topology of the array chip and its macro cell is described. The schematic design features of radiation-hardened and cryogenic analog ICs based on the AC are indicated. The circuit simulation results of the main analog components of the AC - voltage comparator, two operational amplifiers and two differential difference operational amplifiers are given.

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2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)

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