{"title":"超低电压运行:设备视角","authors":"T. Hiramoto","doi":"10.1109/ISLPED.2011.5993605","DOIUrl":null,"url":null,"abstract":"The challenges for ultra-low-voltage operation are reviewed from the device side. The degradations of transistor variability and subthreshold swing are the main obstacles for the ultra-low-voltage operation. A new transistor structure with fully-depleted channel is discussed as a possible solution.","PeriodicalId":117694,"journal":{"name":"IEEE/ACM International Symposium on Low Power Electronics and Design","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Ultra-low-voltage operation: Device perspective\",\"authors\":\"T. Hiramoto\",\"doi\":\"10.1109/ISLPED.2011.5993605\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The challenges for ultra-low-voltage operation are reviewed from the device side. The degradations of transistor variability and subthreshold swing are the main obstacles for the ultra-low-voltage operation. A new transistor structure with fully-depleted channel is discussed as a possible solution.\",\"PeriodicalId\":117694,\"journal\":{\"name\":\"IEEE/ACM International Symposium on Low Power Electronics and Design\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/ACM International Symposium on Low Power Electronics and Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLPED.2011.5993605\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/ACM International Symposium on Low Power Electronics and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLPED.2011.5993605","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The challenges for ultra-low-voltage operation are reviewed from the device side. The degradations of transistor variability and subthreshold swing are the main obstacles for the ultra-low-voltage operation. A new transistor structure with fully-depleted channel is discussed as a possible solution.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
