{"title":"Si与Si/sub - 1-x/Ge/sub -x/基BJTs的数值模拟比较","authors":"B. Pejcinovic, T. Tang, D. Navon","doi":"10.1109/BIPOL.1988.51042","DOIUrl":null,"url":null,"abstract":"Static and small signal performances of Si and Si/sub 1-x/Ge/sub x/ based bipolar junction transistors (BJTs) are compared using numerical simulation. Si/sub 1-x/Ge/sub x/ BJT shows reduced turn-on voltage ( Delta V/sub BE/=0.12 V), much higher current gain h/sub fe/, up to two time higher unity current gain frequency f/sub T/, and somewhat higher maximum frequency of oscillation f/sub max/. By using Si/sub 1-x/Ge/sub x/ it is possible to reduce power dissipation in the circuit environment. Small signal current gain, as obtained by using the quasi-static approximation, is shown for the common emitter configuration.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A comparison of Si and Si/sub 1-x/Ge/sub x/ based BJTs using numerical simulation\",\"authors\":\"B. Pejcinovic, T. Tang, D. Navon\",\"doi\":\"10.1109/BIPOL.1988.51042\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Static and small signal performances of Si and Si/sub 1-x/Ge/sub x/ based bipolar junction transistors (BJTs) are compared using numerical simulation. Si/sub 1-x/Ge/sub x/ BJT shows reduced turn-on voltage ( Delta V/sub BE/=0.12 V), much higher current gain h/sub fe/, up to two time higher unity current gain frequency f/sub T/, and somewhat higher maximum frequency of oscillation f/sub max/. By using Si/sub 1-x/Ge/sub x/ it is possible to reduce power dissipation in the circuit environment. Small signal current gain, as obtained by using the quasi-static approximation, is shown for the common emitter configuration.<<ETX>>\",\"PeriodicalId\":302949,\"journal\":{\"name\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1988.51042\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51042","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A comparison of Si and Si/sub 1-x/Ge/sub x/ based BJTs using numerical simulation
Static and small signal performances of Si and Si/sub 1-x/Ge/sub x/ based bipolar junction transistors (BJTs) are compared using numerical simulation. Si/sub 1-x/Ge/sub x/ BJT shows reduced turn-on voltage ( Delta V/sub BE/=0.12 V), much higher current gain h/sub fe/, up to two time higher unity current gain frequency f/sub T/, and somewhat higher maximum frequency of oscillation f/sub max/. By using Si/sub 1-x/Ge/sub x/ it is possible to reduce power dissipation in the circuit environment. Small signal current gain, as obtained by using the quasi-static approximation, is shown for the common emitter configuration.<>
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