稀Ge:C合金的能带结构与表征

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305995

C. Stephenson, William A. O. Brien, M. Penninger, Miriam M. Gillett-Kunnath, J. Zajicek, W. Schneider, R. Kudrawiec, M. Wistey

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引用次数: 0

摘要

在0.2% C的条件下，Ge:C在50 meV的直接传导带谷中发生了分裂。带结构的从头算模拟表明，γ谷降低了170 meV/%C。

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Band structure and characterization of dilute Ge:C alloys

Experimental growth of Ge:C with 0.2% C shows a splitting in the direct conduction band valley of 50 meV. Ab initio simulations of the band structure show a gamma valley decrease of 170 meV/%C.

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2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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