提高压电- mems变压器性能

2018 IEEE International Frequency Control Symposium (IFCS) Pub Date : 2018-05-21 DOI:10.1109/FCS.2018.8597575

S. Bedair, R. Rudy, Lain Kierzewskr, J. Pulskamp, B. Power, J. Martin, Raphael Luo, Ryan Cable, V. Tseng, R. Benoit

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引用次数: 2

摘要

本文提出了一种利用外延模谐波来改善薄膜压电MEMS变压器的品质因数(TxFoM)的方法。该方法的建模揭示了TxFoM的多重改进以及换能器电气质量因子的重要性和影响。PZT-on·$4\mu \ mathm {m}$ Si和AlN变压器的实验结果验证了这种架构方法，并分别显示了4.3倍和4.4倍的TxFoM改进。这些用- 63MHz PZT-on-Si和~ 69mhz AlN压电变压器进行了验证。测量结果还揭示了布线电阻和寄生的重要性及其对电气质量因子Q_{elec}$的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Enhancing Piezo-MEMS Transformer Performance

This paper documents an architecture approach using extensional mode harmonics to improve the figures of merit (TxFoM) of thin-film piezoelectric MEMS transformers. Modeling of this approach reveals multi-fold improvements in TxFoM as well as the significance and impact of transducer electrical quality factor. Experimental results with PZT-on· $4\mu \mathrm{m}$ Si and AlN transformers verify this architecture approach and show up to 4.3X and 4.4X TxFoM improvements, respectively. These are demonstrated with −63MHz PZT-on-Si and ~69 MHz AlN piezoelectric transformers. Measurement results also reveal the importance of routing resistance and parasitics and their impact on electrical quality factor $Q_{elec}$.

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2018 IEEE International Frequency Control Symposium (IFCS)

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