{"title":"GaAs技术现状及未来射频前沿多频段、多标准挑战的展望","authors":"P. Zampardi","doi":"10.1109/RWS.2008.4463460","DOIUrl":null,"url":null,"abstract":"GaAs HBT technologies currently dominate the wireless handset marketplace due to their proven RF performance, time-to-market, and size advantages compared to other technologies. As with any technology, new customer specifications and requirements drive the development of next generation processes. Some of the challenging customer requirements that will be, or already are, part of the future of handset power amplifiers are lower end-of-life battery voltage, lower/no reference voltage, improved mid-power efficiency performance, and the increasing number of band/modes used in the phone.","PeriodicalId":431471,"journal":{"name":"2008 IEEE Radio and Wireless Symposium","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"GaAs technology status and perspectives for multi-band and multi-standard challenges in upcoming RF-frontends\",\"authors\":\"P. Zampardi\",\"doi\":\"10.1109/RWS.2008.4463460\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaAs HBT technologies currently dominate the wireless handset marketplace due to their proven RF performance, time-to-market, and size advantages compared to other technologies. As with any technology, new customer specifications and requirements drive the development of next generation processes. Some of the challenging customer requirements that will be, or already are, part of the future of handset power amplifiers are lower end-of-life battery voltage, lower/no reference voltage, improved mid-power efficiency performance, and the increasing number of band/modes used in the phone.\",\"PeriodicalId\":431471,\"journal\":{\"name\":\"2008 IEEE Radio and Wireless Symposium\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio and Wireless Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RWS.2008.4463460\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio and Wireless Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2008.4463460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs technology status and perspectives for multi-band and multi-standard challenges in upcoming RF-frontends
GaAs HBT technologies currently dominate the wireless handset marketplace due to their proven RF performance, time-to-market, and size advantages compared to other technologies. As with any technology, new customer specifications and requirements drive the development of next generation processes. Some of the challenging customer requirements that will be, or already are, part of the future of handset power amplifiers are lower end-of-life battery voltage, lower/no reference voltage, improved mid-power efficiency performance, and the increasing number of band/modes used in the phone.
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