光电用自旋涂覆季系硫族化合物CZT(S, O)薄膜的表面表征

R. A. Busari, B. Taleatu, S. Adewinbi, O. E. Adewumi, A. Fasasi
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引用次数: 3

摘要

采用溶胶-凝胶自旋镀膜技术,在不同的溶液浓度和不同的角速度下,在玻璃衬底上制备了硫化铜锌锡薄膜。表面形貌表明,沉积层是连续的,无针孔。薄膜的颗粒分布均匀,并牢固地粘附在基材上。x射线衍射研究表明,该薄膜为多晶,具有四方kesterite结构。晶面间距和平均晶粒尺寸分别为3.732 A和56.53 nm。采用卢瑟福后向散射光谱(RBS)测定了薄膜的厚度和化学计量学,波长为127 nm, Cu1.5Zn1.0Sn1.1S4.4O3.3。光学研究表明,沉积的薄膜表现出直接的能带跃迁。能隙值在1.30 ~ 1.60 eV之间。研究结果表明,沉积的CZTS薄膜可以作为纳米结构光电器件的良好吸收材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Surface Characterisation of Spin Coated Quaternary Chalcogenide CZT(S, O) Thin Film for Optoelectronic Applications
Thin films of copper zinc tin sulphide (CZTS) have been deposited on glass substrate at various solution concentration and angular speed using sol-gel spin coating technique. Surface morphology showed that the deposited layers are continuous and pinhole free. The film’s particles are evenly distributed and adhered firmly to the substrates. X-ray diffraction studies revealed that the films are polycrystalline with tetragonal kesterite structure. Interplanar spacing and average crystallite size were estimated as 3.732 A and 56.53 nm. Film’s thickness and stoichiometry were determined from Rutherford Backscattering Spectroscopy (RBS) as127 nm and Cu1.5Zn1.0Sn1.1S4.4O3.3. Optical studies showed that the deposited films exhibit direct band transition. The values of the energy gap were found between 1.30 and 1.60 eV. The result of the study suggested that the deposited CZTS thin films can perform as a good absorber material in nanostructured optoelectronic devices.
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