{"title":"高摆幅互补c类压控振荡器","authors":"Luca Fanori, P. Andreani","doi":"10.1109/ESSCIRC.2013.6649159","DOIUrl":null,"url":null,"abstract":"This paper presents a high-swing VCO combining the efficiency of the class-C oscillator with that of the complementary PMOS-NMOS topology. Moreover, removing the traditional tail current source, the VCO exhibits an even larger swing, maximizing the phase noise performance. Designed in a 90nm CMOS process, the VCO operates between 3.3GHz and 4.4 GHz, for a 28% tuning range. Drawing 1.8mA from 1.2V, the phase noise is -142 dBc/Hz at a 10MHz offset from a 4.4GHz carrier. The resulting phase-noise FoM is 191.5 dBc/Hz and varies 1.5 dB across the tuning range.","PeriodicalId":183620,"journal":{"name":"2013 Proceedings of the ESSCIRC (ESSCIRC)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"A high-swing complementary class-C VCO\",\"authors\":\"Luca Fanori, P. Andreani\",\"doi\":\"10.1109/ESSCIRC.2013.6649159\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a high-swing VCO combining the efficiency of the class-C oscillator with that of the complementary PMOS-NMOS topology. Moreover, removing the traditional tail current source, the VCO exhibits an even larger swing, maximizing the phase noise performance. Designed in a 90nm CMOS process, the VCO operates between 3.3GHz and 4.4 GHz, for a 28% tuning range. Drawing 1.8mA from 1.2V, the phase noise is -142 dBc/Hz at a 10MHz offset from a 4.4GHz carrier. The resulting phase-noise FoM is 191.5 dBc/Hz and varies 1.5 dB across the tuning range.\",\"PeriodicalId\":183620,\"journal\":{\"name\":\"2013 Proceedings of the ESSCIRC (ESSCIRC)\",\"volume\":\"116 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Proceedings of the ESSCIRC (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2013.6649159\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2013.6649159","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a high-swing VCO combining the efficiency of the class-C oscillator with that of the complementary PMOS-NMOS topology. Moreover, removing the traditional tail current source, the VCO exhibits an even larger swing, maximizing the phase noise performance. Designed in a 90nm CMOS process, the VCO operates between 3.3GHz and 4.4 GHz, for a 28% tuning range. Drawing 1.8mA from 1.2V, the phase noise is -142 dBc/Hz at a 10MHz offset from a 4.4GHz carrier. The resulting phase-noise FoM is 191.5 dBc/Hz and varies 1.5 dB across the tuning range.
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