Synthesis and characterization of Gallium Nitride nanocrystals

A simple method to synthesize Gallium Nitride (GaN) powder using gallium trichloride (GaCl3) and ethylene diamine tetra acetic acid (EDTA) as starting materials has been discussed in this article. GaN nanocrystals were synthesized by nitradation of Gallium-EDTA complex at different temperatures of 600 °C, 700 °C, 800 °C and 900 °C in ammonia (NH3) atmosphere. X-ray diffraction analysis revealed the formation of single phase hexagonal GaN for the compound synthesized at temperature of 900 °C. However the other low temperature synthesis resulted mixed phases of β-Ga2O3, 2GaONO3.N2O5 and GaN. Scanning electron microscopy images show that the particles were in the form of agglomerates. The average size of the particle was found to be ∼20 nm by transmission electron microscopy. Energy Dispersive X-ray diffraction analysis shows variation in elemental composition of synthesized compound with respect to temperature. The room temperature photoluminescence exhibits band-edge emission of GaN at 3.46 eV.