一种新的多晶硅TFT模型的直接参数提取技术

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI:10.1109/ICMTS.1999.766247

B. Iñíguez, Z. Xu, T. Fjeldly, M. Shur

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引用次数: 2

摘要

我们描述了一种适合于电路仿真的新的基于物理的多晶硅(poly-Si) TFT模型的最重要参数的直接提取技术。基于物理的模型涵盖了使用连续函数的所有操作系统，包括短通道效应，并且已经验证了通道长度低至2 /spl mu/m的设备。尽管参数集很小，但该模型包含了对信道长度的必要依赖关系。

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Direct parameter extraction techniques for a new poly-Si TFT model

We describe direct extraction techniques for the most important parameters of a new physics-based polysilicon (poly-Si) TFT model, suitable for circuit simulation. The physics-based model covers all operating regimes using continuous functions, includes short-channel effects and has been validated for devices of channel lengths down to 2 /spl mu/m. In spite of a small parameter set, the model includes the necessary dependencies on channel length.

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ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)

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