分子束外延法在MgO(001)上生长Fe/sub - 3-x/Cr/sub x/O/sub 4/薄膜的结构和磁性能

INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005. Pub Date : 2005-10-17 DOI:10.1109/INTMAG.2005.1464188

C. Huang, D.S. Lee, G. Chern

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引用次数: 0

摘要

本文研究了Fe/Cr比的连续变化，研究了分子束外延生长Fe/sub 3-x/Cr/sub x/O/sub 4/薄膜的结构和磁性能。与常见的二价铁氧体如Ni-、co -等不同，Cr离子的价态通常为3+。在Cr/Fe比(x < 1.5)较低的Fe/sub 3-x/Cr/sub x/O/sub 4/薄膜中，用Cr代替Fe可使磁化强度线性降低。而在含x > 1.5的薄膜中，Cr离子的高价态导致尖晶石结构不稳定，铁磁性不复存在。

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Structural and magnetic properties of Fe/sub 3-x/Cr/sub x/O/sub 4/ films grown on MgO(001) by molecular beam epitaxy

A continuous change of Fe/Cr ratio was done and the structural and magnetic properties of a series of Fe/sub 3-x/Cr/sub x/O/sub 4/ films grown by molecular beam epitaxy were investigated in this paper. The valence of Cr ion usually forms 3+ state which is different from the most popular divalent ferrites such as Ni-, Co-ferrites. Replacing Fe by Cr in Fe/sub 3-x/Cr/sub x/O/sub 4/ films with lower Cr/Fe ratio (x < 1.5) causes a linear decrease of magnetization. But in the films with x > 1.5 the high valence state of Cr ion leads to instability of spinel structure and the ferrimagnetism no longer exists.

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INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.

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0.50

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