{"title":"一种高速目标跟踪CMOS图像传感器","authors":"Qingyu Lin, Wei Miao, N. Wu","doi":"10.1109/ASSCC.2006.357871","DOIUrl":null,"url":null,"abstract":"The paper proposes a high-speed target tracking CMOS image sensor. The target tracking CMOS image sensor consists of an image sensor array, row-parallel processors, a controller and a SRAM. It implements two novel concise algorithms that composed of efficient operations: such as collision detection, separation detection and position extraction. A 64 times 64 pixel array high-speed target tracking CMOS image sensor chip was implemented in using 0.35 mum 2P4M CMOS process. An N-well/P-sub SAB diode without salicide is used as photodiode in the image sensor. The chip size is 4.5 mm times 2.5 mm. The measured results demonstrated that the chip can perform target tracking at the rate of 1000 fps with more functionality and less area than the reported digital chips. The chip power consumption is 30 mW at the main clock of 20 MHz.","PeriodicalId":142478,"journal":{"name":"2006 IEEE Asian Solid-State Circuits Conference","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A High-Speed Target Tracking CMOS Image Sensor\",\"authors\":\"Qingyu Lin, Wei Miao, N. Wu\",\"doi\":\"10.1109/ASSCC.2006.357871\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper proposes a high-speed target tracking CMOS image sensor. The target tracking CMOS image sensor consists of an image sensor array, row-parallel processors, a controller and a SRAM. It implements two novel concise algorithms that composed of efficient operations: such as collision detection, separation detection and position extraction. A 64 times 64 pixel array high-speed target tracking CMOS image sensor chip was implemented in using 0.35 mum 2P4M CMOS process. An N-well/P-sub SAB diode without salicide is used as photodiode in the image sensor. The chip size is 4.5 mm times 2.5 mm. The measured results demonstrated that the chip can perform target tracking at the rate of 1000 fps with more functionality and less area than the reported digital chips. The chip power consumption is 30 mW at the main clock of 20 MHz.\",\"PeriodicalId\":142478,\"journal\":{\"name\":\"2006 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2006.357871\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2006.357871","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
摘要
提出了一种高速目标跟踪CMOS图像传感器。目标跟踪CMOS图像传感器由图像传感器阵列、行并行处理器、控制器和SRAM组成。它实现了碰撞检测、分离检测和位置提取两种新颖简洁的算法。采用0.35 μ m 2P4M CMOS工艺,实现了64 × 64像素阵列高速目标跟踪CMOS图像传感器芯片。在图像传感器中,采用不含水杨酸的n阱/ p阱SAB二极管作为光电二极管。芯片尺寸为4.5 mm × 2.5 mm。测量结果表明,该芯片可以以1000 fps的速度进行目标跟踪,并且比现有的数字芯片具有更大的功能和更小的面积。芯片功耗为30mw,主频为20mhz。
The paper proposes a high-speed target tracking CMOS image sensor. The target tracking CMOS image sensor consists of an image sensor array, row-parallel processors, a controller and a SRAM. It implements two novel concise algorithms that composed of efficient operations: such as collision detection, separation detection and position extraction. A 64 times 64 pixel array high-speed target tracking CMOS image sensor chip was implemented in using 0.35 mum 2P4M CMOS process. An N-well/P-sub SAB diode without salicide is used as photodiode in the image sensor. The chip size is 4.5 mm times 2.5 mm. The measured results demonstrated that the chip can perform target tracking at the rate of 1000 fps with more functionality and less area than the reported digital chips. The chip power consumption is 30 mW at the main clock of 20 MHz.