具有Co硅化源极/漏极和高k栅极电介质的大马士革金属栅极mosfet

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852773

K. Matsuo, T. Saito, A. Yagishita, T. Iinuma, A. Murakoshi, K. Nakajima, S. Omoto, K. Suguro

{"title":"具有Co硅化源极/漏极和高k栅极电介质的大马士革金属栅极mosfet","authors":"K. Matsuo, T. Saito, A. Yagishita, T. Iinuma, A. Murakoshi, K. Nakajima, S. Omoto, K. Suguro","doi":"10.1109/VLSIT.2000.852773","DOIUrl":null,"url":null,"abstract":"Damascene metal gate MOSFETs with Co silicided source/drain and high-k dielectrics were successfully formed without agglomeration of CoSi/sub 2/ films. Good transistor characteristics were reproducibly obtained and shorter inverter delay was confirmed by 151 stage CMOS ring oscillators.","PeriodicalId":268624,"journal":{"name":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","volume":"05 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Damascene metal gate MOSFETs with Co silicided source/drain and high-k gate dielectrics\",\"authors\":\"K. Matsuo, T. Saito, A. Yagishita, T. Iinuma, A. Murakoshi, K. Nakajima, S. Omoto, K. Suguro\",\"doi\":\"10.1109/VLSIT.2000.852773\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Damascene metal gate MOSFETs with Co silicided source/drain and high-k dielectrics were successfully formed without agglomeration of CoSi/sub 2/ films. Good transistor characteristics were reproducibly obtained and shorter inverter delay was confirmed by 151 stage CMOS ring oscillators.\",\"PeriodicalId\":268624,\"journal\":{\"name\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"volume\":\"05 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2000.852773\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2000.852773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

成功制备了具有Co硅化源极/漏极和高k介电体的Damascene金属栅极mosfet，没有CoSi/sub /薄膜的团聚。通过151级CMOS环形振荡器，获得了良好的晶体管特性，并证实了较短的逆变器延迟。

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Damascene metal gate MOSFETs with Co silicided source/drain and high-k gate dielectrics

Damascene metal gate MOSFETs with Co silicided source/drain and high-k dielectrics were successfully formed without agglomeration of CoSi/sub 2/ films. Good transistor characteristics were reproducibly obtained and shorter inverter delay was confirmed by 151 stage CMOS ring oscillators.

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来源期刊

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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