通过压缩写入来延长基于NAND闪存的SSD的寿命

Haitao Wu, Tianming Yang, Ping Huang, Wen-Kuang Chou
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引用次数: 0

摘要

在传统的文件系统中,部分页写入会导致基于NAND闪存的ssd由于写的页对齐而产生内部碎片和写放大。尽管大页面大小对于增加闪存容量和吞吐量很有用,但由于频繁的部分页面写入,它们可能会降低闪存存储系统的性能和生命周期。在分析了各种实际的工作负载跟踪之后,我们观察到,对于大型写请求的头和尾,部分页面写是常见的。这种观察结果使得压缩写入成为可能,它在将数据写入flash之前,将来自相同大写请求的两个部分页面写入压缩到一个页面。因此,我们提出了一种紧凑的页级写入FTL方案,称为CWFTL,以延长SSD的生命周期。实验结果表明,CWFTL确实减少了数据写入flash的次数和平均读/写响应时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Extending the lifetime of NAND flash-based SSD through compacted write
In the traditional file system, the partial page write will result in internal fragmentation and write amplification of NAND flash-based SSDs due to the page-alignment of write. Although large page sizes are useful for increasing the flash capacity and throughput, they may decrease the performance and lifetime of flash storage systems for the frequent partial page writes. After analysing the various realistic workload traces, we observe that the partial page writes are common for those heads and tails of large write requests. This observation makes compacted write possible, which compresses two partial page writes from the same large write request into one page before data are written into flash. Therefore, we propose a compacted write for page-level FTL scheme, called CWFTL, to extend the lifetime of SSD. The experiment results show that CWFTL really reduces the times of data written to flash and the average read/write response time.
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