用InAs/InGaAs量子点激光致密注射微盘

N. Kryzhanovskaya, E. Moiseev, M. Kulagina, Y. Guseva, Y. Zadiranov, M. Maximov, A. Lipovskii, B. Afinogenov, A. Nasibulin, A. Zhukov
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引用次数: 0

摘要

本文介绍了在GaAs衬底上生长的InAs/InGaAs自组织量子点对注入微盘和微环激光器的表征结果。微谐振腔直径在9 ~ 31 μm之间。在室温和高达100°C的连续波状态下,微激光器在没有外部冷却的情况下工作。在环形谐振器几何形状的情况下,与圆盘谐振器相比,观察到阈值电流的减少,这可能是由于减少了谐振器中心的电流浪费,在那里低语廊激光模式的场可以忽略不计。这也表明非辐射表面复合和载流子扩散对量子点微激光器的影响不显著。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Lasing in compact injection microdisks with InAs/InGaAs quantum dots
We present results of characterization of injection microdisk and microring lasers with InAs/InGaAs self-organized quantum dots grown on a GaAs substrate. The microresonator diameters are within 9-31 μm. The microlasers operate without external cooling in continuous wave regime at room temperature and up to 100°C. In case of ring resonator geometry, a reduction of threshold current in comparison with the disk resonator is observed, that is due probably to reduction of current waste in the center of the resonator where field of whispering gallery lasing modes is negligible. This also indicates that the effects of non-radiative surface recombination and carrier diffusion are insignificant for QD-based microlasers.
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