分离吸收倍增GaN/AlGaN雪崩光电二极管的光响应模拟

Numerical Simulation of Optoelectronic Devices, 2014 Pub Date : 2014-10-27 DOI:10.1109/NUSOD.2014.6935341

Xiaodong Wang, B. Wang, Liwei Hou, Wei Xie, Xiaoyao Chen, M. Pan

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引用次数: 1

摘要

我们提出了分离吸收和倍增(SAM) GaN/AlGaN雪崩光电二极管(APD)的详细建模过程。利用所构建的二维数值模型，得到了与偏置相关的光谱响应特性。结果表明，随着偏置的增大，240 ~ 450nm波段的光谱响应度完全增大。

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Photoresponse simulation for separate absorption and multiplication GaN/AlGaN avalanche photodiode

We present the detailed procedure for modeling of separate absorption and multiplication (SAM) GaN/AlGaN avalanche photodiode (APD). The bias-dependent spectral responsivity characteristics are obtained by using the constructed two-dimensional numerical model. It is found that the spectral responsivities with wavelength from 240 to 450nm are entirely increased with the increased bias.

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Numerical Simulation of Optoelectronic Devices, 2014

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