用于嵌入式和独立非易失性存储器应用的新型/spl μ /沟槽相变存储器单元

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. Pub Date : 2004-06-15 DOI:10.1109/VLSIT.2004.1345368

F. Pellizzer, A. Pirovano, F. Ottogalli, M. Magistretti, M. Scaravaggi, P. Zuliani, M. Tosi, Augusto Benvenuti, P. Besana, S. Cadeo, T. Marangon, R. Morandi, R. Piva, A. Spandre, R. Zonca, Alberto Modelli, E. Varesi, T. Lowrey, A. L. Lacaita, G. Casagrande, P. Cappelletti, R. Bez

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引用次数: 157

摘要

提出了一种新的基于硫族化合物的非易失性相变存储器的电池结构。新的/spl mu/trench方法与先进的CMOS技术完全兼容，具有高度可制造性，并且可以优化阵列密度和单元性能。编程电流可达600 /spl mu/A，编程周期可达10/sup / 11/次，在110/spl℃下可保持数据10年。通过多兆阵列的实验结果验证了其可制造性。

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Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications

A novel cell structure for chalcogenide-based non-volatile Phase-Change Memories is presented. The new /spl mu/trench approach is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cell performance. Programming currents of 600 /spl mu/A, endurance of 10/sup 11/ programming cycles and data retention capabilities for 10 years at 110/spl deg/C have been demonstrated. The manufacturability is proven by experimental results from multi-megabit arrays.

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Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.

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