M. Mandurrino, G. Verzellesi, M. Goano, M. Vallone, F. Bertazzi, G. Ghione, M. Meneghini, G. Meneghesso, E. Zanoni
{"title":"InGaN/GaN led中的陷阱辅助隧道:实验和基于物理的模拟","authors":"M. Mandurrino, G. Verzellesi, M. Goano, M. Vallone, F. Bertazzi, G. Ghione, M. Meneghini, G. Meneghesso, E. Zanoni","doi":"10.1109/NUSOD.2014.6935332","DOIUrl":null,"url":null,"abstract":"We present results from a combined experimental and numerical investigation of a blue InGaN/GaN LED test structure grown on a SiC substrate, confirming that tunneling represents a critical contribution to the sub-threshold forward-bias current and discussing the relative importance of different trap-assisted electron tunneling processes.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Trap-assisted tunneling in InGaN/GaN LEDs: Experiments and physics-based simulation\",\"authors\":\"M. Mandurrino, G. Verzellesi, M. Goano, M. Vallone, F. Bertazzi, G. Ghione, M. Meneghini, G. Meneghesso, E. Zanoni\",\"doi\":\"10.1109/NUSOD.2014.6935332\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present results from a combined experimental and numerical investigation of a blue InGaN/GaN LED test structure grown on a SiC substrate, confirming that tunneling represents a critical contribution to the sub-threshold forward-bias current and discussing the relative importance of different trap-assisted electron tunneling processes.\",\"PeriodicalId\":114800,\"journal\":{\"name\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Numerical Simulation of Optoelectronic Devices, 2014\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2014.6935332\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Numerical Simulation of Optoelectronic Devices, 2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2014.6935332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Trap-assisted tunneling in InGaN/GaN LEDs: Experiments and physics-based simulation
We present results from a combined experimental and numerical investigation of a blue InGaN/GaN LED test structure grown on a SiC substrate, confirming that tunneling represents a critical contribution to the sub-threshold forward-bias current and discussing the relative importance of different trap-assisted electron tunneling processes.
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