TID对0.13 μm SONOS记忆单元保留率的影响:器件模拟方法

Shipra Bassi, M. Pattanaik
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引用次数: 4

摘要

空间应用中使用的快闪存储器单元不断受到总电离剂量效应的影响。它在氧化物和氧化物/衬底界面中引起电荷捕获。本文研究了0.13μm SONOS闪存电池在1 Mrad(Si)下不同电荷状态下的TID辐射响应。研究发现,由于空穴的积累,程序记忆态和原始记忆态的阈值电压随辐照而降低。对于擦除态,氮化物层中诱导空穴的积累和空穴的损失趋于相互抵消,变化不明显。此外,我们还提出了一种设备模拟方法来测试室温和高温下的数据保留情况作为所接收的TID照射的函数。我们观察到,保留率与辐照剂量的关系不大。TID暴露降低了器件的保留,并且由于热激活的电子脱陷,这种效应随着温度的升高而增强。所有的分析都是使用Sentaurus TCAD套件中的电荷俘获物理模拟模型完成的,并将结果与已建立的定性模型进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
TID effects on retention of 0.13 μm SONOS memory cell: A device simulation approach
Flash memory cells used in space applications are under continuous impact of Total Ionizing Dose (TID) effects. It causes charge trapping in the oxide and in the oxide/substrate interface. In this work, we investigate the TID radiation response of 0.13μm SONOS flash memory cell with different charge states upto 1 Mrad(Si). It is found that threshold voltage of programmed and virgin states of memory decreases with irradiation due to accumulation of holes. For erased state, accumulation of induced holes and loss of holes in nitride layer tends to cancel each other, causing no significant change. Further, we also proposed a device simulation approach to test data retention at room and high temperature as a function of TID irradiations received. We observed that retention is not much dependent on irradiation dose. TID exposure degrades the device retention and this effect enhances with increase in temperature due to thermally activated electron detrapping. All the analyses are accomplished using physical simulation models of charge trapping in Sentaurus TCAD suite, comparing results with established qualitative models.
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