采用光学步进光刻技术制备汽车雷达系统用GaAs HEMT MMIC芯片

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/gaas.1996.567866

J. Muller, A. Bangert, T. Grave, M. Karner, H. Riechert, A. Schafer, H. Siweris, L. Schleicher, H. Tischer, L. Verweyen, W. Kellner, T. Meier

{"title":"采用光学步进光刻技术制备汽车雷达系统用GaAs HEMT MMIC芯片","authors":"J. Muller, A. Bangert, T. Grave, M. Karner, H. Riechert, A. Schafer, H. Siweris, L. Schleicher, H. Tischer, L. Verweyen, W. Kellner, T. Meier","doi":"10.1109/gaas.1996.567866","DOIUrl":null,"url":null,"abstract":"A production oriented GaAs HEMT MMIC chipset for a 77 GHz FMCW automotive radar system is reported. It differs mainly in two aspects from the GaAs MMIC solutions described earlier: (1) 0.12 /spl mu/m gatelength PHEMTs are fabricated by optical stepper lithography, (2) a coplanar design is used. A fully passivated PHEMT fabrication process is reported with current-gain and power-gain cutoff frequencies exceeding 115 and 220 GHz, respectively. The design and performance of the chipset consisting of four different MMICs (VCO, harmonic mixer, transmitter, receiver) is described. The great potential of this MMIC approach to meet all system requirements of an automotive radar sensor in a cost effective and production oriented way is shown.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"A GaAs HEMT MMIC chip set for automotive radar systems fabricated by optical stepper lithography\",\"authors\":\"J. Muller, A. Bangert, T. Grave, M. Karner, H. Riechert, A. Schafer, H. Siweris, L. Schleicher, H. Tischer, L. Verweyen, W. Kellner, T. Meier\",\"doi\":\"10.1109/gaas.1996.567866\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A production oriented GaAs HEMT MMIC chipset for a 77 GHz FMCW automotive radar system is reported. It differs mainly in two aspects from the GaAs MMIC solutions described earlier: (1) 0.12 /spl mu/m gatelength PHEMTs are fabricated by optical stepper lithography, (2) a coplanar design is used. A fully passivated PHEMT fabrication process is reported with current-gain and power-gain cutoff frequencies exceeding 115 and 220 GHz, respectively. The design and performance of the chipset consisting of four different MMICs (VCO, harmonic mixer, transmitter, receiver) is described. The great potential of this MMIC approach to meet all system requirements of an automotive radar sensor in a cost effective and production oriented way is shown.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/gaas.1996.567866\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/gaas.1996.567866","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 15

摘要

报道了一种用于77 GHz FMCW汽车雷达系统的GaAs HEMT MMIC芯片组。它与前面描述的GaAs MMIC解决方案主要在两个方面不同:(1)采用光学步进光刻技术制造0.12 /spl mu/m栅极长度phemt;(2)采用共面设计。报道了一种完全钝化的PHEMT制造工艺，其电流增益和功率增益截止频率分别超过115 GHz和220 GHz。介绍了由四个不同的mmic (VCO、谐波混频器、发射机、接收机)组成的芯片组的设计和性能。这种MMIC方法具有巨大的潜力，可以满足汽车雷达传感器的所有系统要求，并且具有成本效益和面向生产的方式。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A GaAs HEMT MMIC chip set for automotive radar systems fabricated by optical stepper lithography

A production oriented GaAs HEMT MMIC chipset for a 77 GHz FMCW automotive radar system is reported. It differs mainly in two aspects from the GaAs MMIC solutions described earlier: (1) 0.12 /spl mu/m gatelength PHEMTs are fabricated by optical stepper lithography, (2) a coplanar design is used. A fully passivated PHEMT fabrication process is reported with current-gain and power-gain cutoff frequencies exceeding 115 and 220 GHz, respectively. The design and performance of the chipset consisting of four different MMICs (VCO, harmonic mixer, transmitter, receiver) is described. The great potential of this MMIC approach to meet all system requirements of an automotive radar sensor in a cost effective and production oriented way is shown.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

自引率

0.00%

发文量