非冷却条件下SiC薄膜激光器的高波特率直接调制

2023 IEEE Silicon Photonics Conference (SiPhotonics) Pub Date : 2023-04-01 DOI:10.1109/SiPhotonics55903.2023.10141907

S. Yamaoka, N. Diamantopoulos, H. Nishi, T. Fujii, K. Takeda, T. Hiraki, S. Kanazawa, T. Kakitsuka, S. Matsuo

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引用次数: 0

摘要

本文综述了近年来在SiC衬底上开发的薄膜激光器。由于高热耗散、高光约束和额外的光反馈效应，该激光器在85℃下产生~30 ghz的弛豫振荡频率和74 ghz的带宽，这使得非冷却100 gbaud的直接调制成为可能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-Baud-Rate Direct Modulation of Membrane Laser on SiC under Uncooled Condition

We review recently developed membrane lasers on a SiC substrate. Due to the high thermal dissipation, high optical confinement, and an additional optical feedback effect, the laser yields a ~30-GHz relaxation oscillation frequency and 74-GHz bandwidth at 85°C, which makes uncooled 100-GBaud direct modulation possible.

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2023 IEEE Silicon Photonics Conference (SiPhotonics)

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