多势垒层间隧道场效应晶体管

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838513

N. Prasad, X. Mou, L. Register, S. Banerjee

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引用次数: 3

摘要

二维范德华材料中的层间隧道场效应晶体管(ITFET)的共振隧穿特性可以通过在“mlTFET”变化中使用多个(m)中间阱和隧道势垒层而变得更加清晰。弹道量子输运模拟用于获得基于二硫化钼的系统的共振特性。电路仿真说明了更尖锐的谐振如何导致更低的工作电压，从而降低功率，从而改善电路性能。

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Multi-barrier inter-layer tunnel field-effect transistor

The resonant tunneling characteristics of the inter-layer tunnel field-effect transistor (ITFET) within 2D van der Waals' materials can be made sharper by the use of multiple (m) intermediate well and tunnel barrier layers within a “mlTFET” variation. Ballistic quantum transport simulations are used to obtain the resonance characteristics in an MoS2 based-system, for specificity. Circuit simulations illustrate how the sharper resonance can lead to lower operating voltages and, thus, power, thereby improving the circuit performance.

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来源期刊

2016 IEEE International Electron Devices Meeting (IEDM)

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