采用高密度等离子溅射沉积高稳定的顶栅顶接触ITZO TFT

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2016-07-06 DOI:10.1109/AM-FPD.2016.7543658

J. Ahn, Kwang-Heum Lee, J. Do, W. Park, S. Park

{"title":"采用高密度等离子溅射沉积高稳定的顶栅顶接触ITZO TFT","authors":"J. Ahn, Kwang-Heum Lee, J. Do, W. Park, S. Park","doi":"10.1109/AM-FPD.2016.7543658","DOIUrl":null,"url":null,"abstract":"Top gate top contact (TGTC) structured thin film transistors with In-Sn-Zn-O active layer deposited by high density plasma sputtering (HDP) have been successfully fabricated. The HDP ITZO TFT achieved saturation mobility of 27.8cm2/Vs, threshold voltage (Vth) of -0.28V The bias-temperature stress with VgS = 20 V and Vds = 0.1 V at 60°C for 2 hours yields the negligible Von shift of 0 V for the HDP ITZO TFT, while that fabricated by means of DC sputtering showed 3.1V shift.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Highly stable top gate top contact ITZO TFT deposited by using high density plasma sputtering\",\"authors\":\"J. Ahn, Kwang-Heum Lee, J. Do, W. Park, S. Park\",\"doi\":\"10.1109/AM-FPD.2016.7543658\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Top gate top contact (TGTC) structured thin film transistors with In-Sn-Zn-O active layer deposited by high density plasma sputtering (HDP) have been successfully fabricated. The HDP ITZO TFT achieved saturation mobility of 27.8cm2/Vs, threshold voltage (Vth) of -0.28V The bias-temperature stress with VgS = 20 V and Vds = 0.1 V at 60°C for 2 hours yields the negligible Von shift of 0 V for the HDP ITZO TFT, while that fabricated by means of DC sputtering showed 3.1V shift.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2016.7543658\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543658","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

采用高密度等离子溅射(HDP)技术成功制备了In-Sn-Zn-O有源层的顶栅顶接触(TGTC)结构薄膜晶体管。HDP ITZO TFT的饱和迁移率为27.8cm2/Vs，阈值电压(Vth)为-0.28V。VgS = 20 V和Vds = 0.1 V的偏温应力在60℃下作用2小时，HDP ITZO TFT的Von位移为0 V，可以忽略，而通过直流溅射制备的HDP ITZO TFT的Von位移为3.1V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Highly stable top gate top contact ITZO TFT deposited by using high density plasma sputtering

Top gate top contact (TGTC) structured thin film transistors with In-Sn-Zn-O active layer deposited by high density plasma sputtering (HDP) have been successfully fabricated. The HDP ITZO TFT achieved saturation mobility of 27.8cm2/Vs, threshold voltage (Vth) of -0.28V The bias-temperature stress with VgS = 20 V and Vds = 0.1 V at 60°C for 2 hours yields the negligible Von shift of 0 V for the HDP ITZO TFT, while that fabricated by means of DC sputtering showed 3.1V shift.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

自引率

0.00%

发文量