WriteSmoothing:使用组内磨损均衡提高非易失性缓存的寿命

Sparsh Mittal, J. Vetter, Dong Li
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引用次数: 27

摘要

在核数增加和带宽墙问题的趋势下,最后一级缓存(llc)的大小大大增加。由于SRAM消耗高泄漏功率,研究人员已经探索使用非易失性存储器(nvm)来设计缓存,因为它们提供高密度和低泄漏功率。然而,由于nvm的写持久性较低,而且现有的缓存管理策略无法感知写变化,因此需要有效的损耗均衡技术来使用nvm实现合理的缓存生命周期。我们提出了WriteSmoothing,一种减轻NVM缓存中集合内写变化的技术。WriteSmoothing逻辑上将缓存集划分为多个模块。对于每个模块,WriteSmoothing都以每种方式记录任何集合的写次数。然后,它定期使模块中最频繁写入的方式不可用,以将写入压力转移到模块集合中的其他方式。广泛的模拟结果表明,平均而言,对于单核和双核系统配置,WriteSmoothing将缓存寿命分别提高2.17倍和2.75倍。此外,它的实现开销很小,并且适用于广泛的算法和系统参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
WriteSmoothing: improving lifetime of non-volatile caches using intra-set wear-leveling
Driven by the trends of increasing core-count and bandwidth-wall problem, the size of last level caches (LLCs) has greatly increased. Since SRAM consumes high leakage power, researchers have explored use of non-volatile memories (NVMs) for designing caches as they provide high density and consume low leakage power. However, since NVMs have low write-endurance and the existing cache management policies are write variation-unaware, effective wear-leveling techniques are required for achieving reasonable cache lifetimes using NVMs. We present WriteSmoothing, a technique for mitigating intra-set write variation in NVM caches. WriteSmoothing logically divides the cache-sets into multiple modules. For each module, WriteSmoothing collectively records number of writes in each way for any of the sets. It then periodically makes most frequently written ways in a module unavailable to shift the write-pressure to other ways in the sets of the module. Extensive simulation results have shown that on average, for single and dual-core system configurations, WriteSmoothing improves cache lifetime by 2.17X and 2.75X, respectively. Also, its implementation overhead is small and it works well for a wide range of algorithm and system parameters.
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