用于高密度I/O的低成本倒装芯片封装设计概念

Tee-Onn Chong, Seng-Hooi Ong, T. Yew, C. Chung, R. Sankman
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引用次数: 7

摘要

由于电气性能要求,半导体工业总体上正在从线键封装向倒装芯片封装迁移。随着高电阻和电感线键的去除,高速总线实现了信号波传播的良好控制特性阻抗和输电网络的较低阻抗。然而,倒装芯片封装的缺点是与线键封装相比,其输入/输出(I/O)路由密度较低。为了满足某些产品的高I/O数,需要创新的倒装芯片碰撞模式和创造性的路由选择。本文将概述一些创新的封装设计概念,包括芯片到封装(定义为1级互连)和封装到主板(MB)(定义为2级互连),以增加I/O信号路由密度,而不增加封装或MB成本。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low cost flip chip package design concepts for high density I/O
The semiconductor industry at large is migrating from wire bond packaging to flip chip packaging due to electrical performance requirements. With the removal of the highly resistive and inductive wire bonds, high-speed buses achieve well-controlled characteristic impedance for signal wave propagation and lower impedance for the power delivery network. However, a disadvantage of flip chip packaging is its lower input/output (I/O) routing density when compared to wire bond packaging. To meet the high I/O count for certain products, innovative flip chip bump patterns and creative routing options are needed. This paper will outline some innovative package design concepts on both die to package, defined as level 1 interconnect, and package to motherboard (MB), defined as level 2 interconnect, to increase the I/O signal routing density without increasing the package or MB cost.
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