翅片宽度对三栅SOI nmosfet单轴应力的影响

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2012-03-14 DOI:10.1109/ICCDCS.2012.6188901

R. Buhler, J. Martino, P. Agopian, R. Giacomini

{"title":"翅片宽度对三栅SOI nmosfet单轴应力的影响","authors":"R. Buhler, J. Martino, P. Agopian, R. Giacomini","doi":"10.1109/ICCDCS.2012.6188901","DOIUrl":null,"url":null,"abstract":"This work analyzes the fin width dependence on induced uniaxial stress on n-type MuGFETs thought 3D simulations. A study on the stress distribution and the electric characterization of the device to measure the impact on its performance is accomplished. The stress distribution and the device performance exhibited dependence on the fin width, with higher stress transfer for narrower fins resulting in better electrical performance.","PeriodicalId":125743,"journal":{"name":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"223 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fin width influence on uniaxial stress of triple-gate SOI nMOSFETs\",\"authors\":\"R. Buhler, J. Martino, P. Agopian, R. Giacomini\",\"doi\":\"10.1109/ICCDCS.2012.6188901\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work analyzes the fin width dependence on induced uniaxial stress on n-type MuGFETs thought 3D simulations. A study on the stress distribution and the electric characterization of the device to measure the impact on its performance is accomplished. The stress distribution and the device performance exhibited dependence on the fin width, with higher stress transfer for narrower fins resulting in better electrical performance.\",\"PeriodicalId\":125743,\"journal\":{\"name\":\"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)\",\"volume\":\"223 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2012.6188901\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2012.6188901","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文通过三维仿真分析了n型mugfet的翅片宽度对诱导单轴应力的依赖性。对器件的应力分布和电特性进行了研究，以测量其对性能的影响。应力分布和器件性能与翅片宽度有关，较窄的翅片具有较高的应力传递，从而获得更好的电气性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Fin width influence on uniaxial stress of triple-gate SOI nMOSFETs

This work analyzes the fin width dependence on induced uniaxial stress on n-type MuGFETs thought 3D simulations. A study on the stress distribution and the electric characterization of the device to measure the impact on its performance is accomplished. The stress distribution and the device performance exhibited dependence on the fin width, with higher stress transfer for narrower fins resulting in better electrical performance.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

自引率

0.00%

发文量