良好定位verilog -相变存储器的紧凑模型

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI:10.1109/SISPAD.2018.8551667

Shruti R. Kulkarni, Deepak Kadetotad, Jae-sun Seo, B. Rajendran

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引用次数: 2

摘要

在这项工作中，我们展示了一个基于Ge2 Sb2 Te5， (GST)硫属化物的相变存储器(PCM)器件的完备紧凑模型。该模型支持所有模式的仿真，包括瞬态、直流和交流。该模型是在Verilog-A中开发的，并使用HSPICE进行仿真。它计算简单，并成功捕获了存储开关的关键高级行为，包括对编程电压，电流和脉冲时间尺度的电阻依赖。

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Well-Posed Verilog-A Compact Model for Phase Change Memory

In this work, we demonstrate a well-posed compact model for phase change memory (PCM) devices based on Ge2 Sb2 Te5, (GST) chalcogenide. This model supports all modes of simulation including transient, DC, and AC. The model is developed in Verilog-A and simulated using HSPICE. It is computationally simple and successfully captures the key high level behaviors of memory switching, including the resistance dependence on programming voltages, currents and pulse time-scales.

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来源期刊

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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