体硅光子学平台中SiOxNy波导与Ge台面结构的光耦合

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305980

K. Okazaki, H. Nishi, T. Tsuchizawa, T. Hiraki, Y. Ishikawa, K. Wada, Tsuyoshi Yamamoto, K. Yamada

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引用次数: 6

摘要

我们成功地证实了硅晶圆上的锗台面与低损耗氮化硅波导之间的可控光耦合。这种耦合结构可用于在cmos工艺友好型大块硅光子平台上构建各种有源器件。

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Optical coupling between SiOxNy waveguide and Ge mesa structures for bulk-Si photonics platform

We successfully confirmed controllable optical coupling between a germanium mesa on a bulk-silicon wafer and a low-loss silicon oxynitride waveguide. This coupling structure can be adopted for constructing various active devices on a CMOS-process-friendly bulk-silicon photonics platform.

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来源期刊

2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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