用于远场无线电力传输的433 MHz e-GaN HEMT功率振荡器

2020 8th International Japan-Africa Conference on Electronics, Communications, and Computations (JAC-ECC) Pub Date : 2020-12-14 DOI:10.1109/JAC-ECC51597.2020.9355883

Theodora Rezk, G. Fahmy, S. Ibrahim, H. Ragai

{"title":"用于远场无线电力传输的433 MHz e-GaN HEMT功率振荡器","authors":"Theodora Rezk, G. Fahmy, S. Ibrahim, H. Ragai","doi":"10.1109/JAC-ECC51597.2020.9355883","DOIUrl":null,"url":null,"abstract":"This paper presents a power oscillator design based on a class E power amplifier. The enhancement GaN HEMT is used for its fast switching time, low ON resistance and low temperature sensitivity. The presented circuit is designed to be used in far field wireless charging which is the 2nd generation in this type of chargers. The simulated output power of the power oscillator is 24.9 W at the ISM band of 433 MHz. Effect of design parameter variability is also studied.","PeriodicalId":146890,"journal":{"name":"2020 8th International Japan-Africa Conference on Electronics, Communications, and Computations (JAC-ECC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 433 MHz e-GaN HEMT based Power Oscillator for Far Field Wireless Power Transfer\",\"authors\":\"Theodora Rezk, G. Fahmy, S. Ibrahim, H. Ragai\",\"doi\":\"10.1109/JAC-ECC51597.2020.9355883\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a power oscillator design based on a class E power amplifier. The enhancement GaN HEMT is used for its fast switching time, low ON resistance and low temperature sensitivity. The presented circuit is designed to be used in far field wireless charging which is the 2nd generation in this type of chargers. The simulated output power of the power oscillator is 24.9 W at the ISM band of 433 MHz. Effect of design parameter variability is also studied.\",\"PeriodicalId\":146890,\"journal\":{\"name\":\"2020 8th International Japan-Africa Conference on Electronics, Communications, and Computations (JAC-ECC)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 8th International Japan-Africa Conference on Electronics, Communications, and Computations (JAC-ECC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/JAC-ECC51597.2020.9355883\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 8th International Japan-Africa Conference on Electronics, Communications, and Computations (JAC-ECC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/JAC-ECC51597.2020.9355883","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文提出了一种基于E类功率放大器的功率振荡器设计。增强型GaN HEMT具有开关时间快、导通电阻低和温度灵敏度低的特点。本文设计的电路用于远场无线充电，是该类充电器的第二代产品。在433 MHz的ISM频段，功率振荡器的模拟输出功率为24.9 W。研究了设计参数变异性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 433 MHz e-GaN HEMT based Power Oscillator for Far Field Wireless Power Transfer

This paper presents a power oscillator design based on a class E power amplifier. The enhancement GaN HEMT is used for its fast switching time, low ON resistance and low temperature sensitivity. The presented circuit is designed to be used in far field wireless charging which is the 2nd generation in this type of chargers. The simulated output power of the power oscillator is 24.9 W at the ISM band of 433 MHz. Effect of design parameter variability is also studied.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 8th International Japan-Africa Conference on Electronics, Communications, and Computations (JAC-ECC)

自引率

0.00%

发文量