同步整流高升压准z源DC-DC变换器仿真研究

2014 55th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON) Pub Date : 2014-12-29 DOI:10.1109/RTUCON.2014.6998215

Liisa Liivik, D. Vinnikov, J. Zakis

{"title":"同步整流高升压准z源DC-DC变换器仿真研究","authors":"Liisa Liivik, D. Vinnikov, J. Zakis","doi":"10.1109/RTUCON.2014.6998215","DOIUrl":null,"url":null,"abstract":"This paper discusses the performance improvement method of the recently popular galvanically isolated quasi-Z-source DC-DC converter. In order to decrease the conduction losses in the quasi-Z-source network and voltage doubler rectifier the replacement of diodes by the N-channel MOSFETs was analyzed. The proposed approach was validated by the computer simulations in PSIM environment with accurate models of the semiconductors based on the device datasheet values. Finally, the power losses and resulting efficiency of the proposed quasi-Z-source DC-DC converter with synchronous rectification were compared to those of the traditional topology.","PeriodicalId":259790,"journal":{"name":"2014 55th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Simulation study of high step-up quasi-Z-source DC-DC converter with synchronous rectification\",\"authors\":\"Liisa Liivik, D. Vinnikov, J. Zakis\",\"doi\":\"10.1109/RTUCON.2014.6998215\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses the performance improvement method of the recently popular galvanically isolated quasi-Z-source DC-DC converter. In order to decrease the conduction losses in the quasi-Z-source network and voltage doubler rectifier the replacement of diodes by the N-channel MOSFETs was analyzed. The proposed approach was validated by the computer simulations in PSIM environment with accurate models of the semiconductors based on the device datasheet values. Finally, the power losses and resulting efficiency of the proposed quasi-Z-source DC-DC converter with synchronous rectification were compared to those of the traditional topology.\",\"PeriodicalId\":259790,\"journal\":{\"name\":\"2014 55th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)\",\"volume\":\"105 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 55th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RTUCON.2014.6998215\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 55th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RTUCON.2014.6998215","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

本文讨论了最近流行的电隔离准z源DC-DC变换器的性能改进方法。为了降低准z源网络和倍压整流器的导通损耗，分析了用n沟道mosfet代替二极管的方法。该方法在PSIM环境下进行了计算机仿真，并基于器件数据表值建立了精确的半导体模型。最后，将所提出的准z源同步整流DC-DC变换器的功率损耗和效率与传统拓扑进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Simulation study of high step-up quasi-Z-source DC-DC converter with synchronous rectification

This paper discusses the performance improvement method of the recently popular galvanically isolated quasi-Z-source DC-DC converter. In order to decrease the conduction losses in the quasi-Z-source network and voltage doubler rectifier the replacement of diodes by the N-channel MOSFETs was analyzed. The proposed approach was validated by the computer simulations in PSIM environment with accurate models of the semiconductors based on the device datasheet values. Finally, the power losses and resulting efficiency of the proposed quasi-Z-source DC-DC converter with synchronous rectification were compared to those of the traditional topology.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2014 55th International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON)

自引率

0.00%

发文量