大功率GaAs集成器件和电路的大规模计算机辅助热设计

Proceedings of 1994 IEEE GaAs IC Symposium Pub Date : 1994-10-16 DOI:10.1109/GAAS.1994.636951

F. Bonani, G. Ghione, M. Pirola, C. Naldi

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引用次数: 10

摘要

将三维大尺度热模拟工具应用于功率III-V器件和集成电路的设计。在对建模方法进行简短描述之后，该方法允许非线性多层和薄基板，通过孔和通过表面金属化进行热传导，并讨论了具有改进散热和功率ic的GEC-Marconi功率mesfet的仿真示例。

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Large-scale, computer-aided thermal design of power GaAs integrated devices and circuits

A three-dimensional large-scale thermal simulation tool is applied to the design of power III-V devices and integrated circuits (ICs). After a short description of the modelling approach, which allows for non-linear multilayered and thinned substrates, via holes, and heat conduction through surface metallizations, simulation examples are discussed concerning GEC-Marconi power MESFETs with improved heat sinking and power ICs.

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Proceedings of 1994 IEEE GaAs IC Symposium

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