(100)、(111)B和邻近(111)B GaAs基质上生长的(Al,Ga)As脱膜的PL研究

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496338

G. Kuang, Zhan-guo Wang, Jiben Liang, Bowei Xu, Zhanping Zhu, L. Zou

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引用次数: 0

摘要

我们首次在邻近的(111)B GaAs衬底上生长出(Al,Ga)As/GaAs薄膜，显示出一些显著的量子线特性-红移高达98 mev。为了比较，在(100)和(111)B衬底上同时沉积了涂层。但是这三种样品的PL结果是非常不同的——我们用一个基于生长动力学的模型来解释这些PL结果，并得出结论(111)B表面的台阶在晶体生长中起着非常重要的作用。

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PL study of (Al,Ga)As epilayers grown on (100), (111)B and vicinal (111)B GaAs substrates

For the first time, we have grown (Al,Ga)As/GaAs epilayers which show some remarkable quantum wire characteristics-red shift as much as 98 meV-on vicinal (111)B GaAs substrate. For comparison, the epilayers were also deposited on (100) and (111)B substrates simultaneously. But the PL results of these three samples are very different-we explained these PL results with a model based on growth dynamics and drew a conclusion that steps on (111)B surface can play a very important role in crystal growth.

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1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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