5G应用中带低损耗I/Q发生器的毫米波CMOS有源移相器

Yitong Xiong, Xiaoping Zeng, Y. Pu, Enze Nie
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引用次数: 0

摘要

本文提出了一种用于5G应用的具有低损耗I/Q发生器的毫米波CMOS有源移相器。提出了一种混合的高通/低通网络拓扑结构来构建I/Q发生器。与传统I/Q发生器相比,该I/Q发生器具有更低的插入损耗。所设计的移相器由有源单差变换器、全差分矢量求和磁芯和差单变换器组成。该毫米波移相器采用90纳米CMOS技术制造,在35-43 GHz范围内提供360°移相范围,同时仅消耗17.3 mW功率和0.36 mm2芯片面积(不包括焊盘)。测量结果表明,移相器在35-43 GHz范围内的平均增益为1.6-5 dB。32个测量相态的RMS相位误差和RMS幅度误差均小于1 dB和5.1°。所提出的移相器能够覆盖n260已发布的频段,是5G毫米波应用的良好候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An mm-wave CMOS Active Phase Shifter with a Low-Loss I/Q Generator for 5G Applications
This paper presents an mm-wave CMOS active phase shifter with a low-loss I/Q generator for 5G applications. A hybrid high-pass/low-pass network topology is proposed to build the I/Q generator. The I/Q generator exhibits lower insertion loss compared to traditional ones. The designed phase shifter is constituted by an active single-to-differential convertor, a fully differential vector-summing core and a differential-to-single convertor. The mm-wave phase shifter, fabricated in 90 nm CMOS technology, provides 360° of phase shifting range over 35-43 GHz while consuming only 17.3 mW of power and 0.36 mm2 of chip area (excluding pads). Measurement results show that the phase shifter achieves an average gain of1.6-5 dB over 35-43 GHz. RMS phase error and RMS amplitude error for 32 measured phase states are less than 1 dB and 5.1°. The proposed phase shifter, which is able to cover the released frequency bands of n260, is a good candidate for 5G mm-wave applications.
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