光锁注入半导体激光器在强度和相位噪声影响下的行为研究

G. S. Samarakkody, Dushani Munasinghe, Sachinthani Alahakoon, Ajith Kumarayapa, R. Weerasuriya
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引用次数: 0

摘要

本文从理论上研究了噪声强度和频率对半导体激光器锁定范围的影响。基于所建立的包括噪声源在内的锁定范围模型进行了数值模拟分析。强度噪声沿失谐频率轴使锁定范围下界发生位移,从而使锁定范围变宽;频率噪声的作用使锁定范围发生位移,但不改变锁定范围宽度。当同时考虑强度和频率噪声时,锁定范围表现为每种噪声的个体变化的叠加。通过这项工作得到的结果只适用于低注入比的应用,如光学传感器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The Behavioral Study of an Optical Injection-Locked Semiconductor Laser under the Influence of Intensity and Phase Noise
This work theoretically investigates the influence of intensity and frequency noise on the locking range of a semi-conductor laser. The analysis was conducted using the numerical simulations based on the developed locking range model including the noise sources. The effect of intensity noise resulted in a broadening of the locking range by shifting its lower boundary along the detuning frequency axis and the effect of frequency noise has shifted the locking range without changing the locking range width. When intensity and frequency noise are considered simultaneously, the locking range shows a superposition of the individual variation of each type of noise. The results obtained through this work is applicable only for the lower injection ratio applications such as optical sensors.
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