高光功率注入下高速改进型单行载流子光电二极管的建模与分析

2022 IEEE 7th Optoelectronics Global Conference (OGC) Pub Date : 2022-12-06 DOI:10.1109/OGC55558.2022.10050988

Zhang Peng, W. Xiong, Ruoyun Yao, Chaodan Chi, Yiti Xiong, C. Ji

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引用次数: 0

摘要

利用商用器件级模拟器Apsys，模拟了不同反向偏置电压下的InGaAs/InP改性单行载流子光电二极管(mutc - pd)在高光功率注入下的性能。通过优化吸收层结构和工作电压，实现了在10 mW/µm2光注入密度下光电响应度为0.16A/W、带宽超过300GHz的MUTC-PD设计。

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Modeling and Analysis of High-Speed Modified Uni-Travelling-Carrier Photodiodes Under High Optical Power Injection

We simulated InGaAs/InP Modified Uni-Traveling-Carrier Photodiodes (MUTC-PDs) with different reverse bias voltages under high optical power injection, using a commercial device level simulator Apsys. By optimizing the absorber layer structure and the operating voltage, this work achieved an MUTC-PD design with an opto-electric responsivity of 0.16A/W and over 300GHz 3-dB bandwidth under 10 mW/µm2 optical injection density.

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2022 IEEE 7th Optoelectronics Global Conference (OGC)

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