Design And Analysis Of Gate-All-Around (GAA) Triple Material Gate Charge Plasma Nanowire FET

In this paper, Gate-All-Around (GAA) Charge Plasma (CP) Nanowire Field Effect Transistor (NW FET) structure design and analysis using Triple Material Gate (TMG) technique making it as a Gate-All-Around Triple Material Gate Charge Plasma Nanowire Field Effect Transistor (GAA TMG CP NW FET) is proposed. The proposed structure GAA TMG CP NW FET is compared with GAA Single Material Gate CP NW FET (GAA SMG CP NW FET) and GAA Double Material Gate CP NW FET (GAA DMG CP NW FET) structures. With the contrast made in between three structures i.e., SMG, DMG & TMG, the proposed structure GAA TMG CP NW FET resulted with promising outcomes in terms of ON-state current (ION), OFF-state current (IOFF) and their current ratios (ION/IOFF). The Analog and RF analysis were made for the proposed structure and compared with SMG & DMG which gave improved results such as Drain current with gate voltage (ID-VGS), Drain current with drain voltage (ID-VDS), Transconductance (gm), Output conductance (gd), Total gate capacitance (CGG) etc. The proposed device is then compared with the structure results such as Band energy, potential, electric field etc. A fair comparison is drawn from the SMG, DMG and TMG structures to prove its ability towards the Nanoscale device structures.