金属图案化晶圆上HDPCVD氧化物异常应力行为的机理

Sootae Lee, J. Park, Min Kim, Sun Rae Kim, Tae Soo, U. Chung, G. Kang
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摘要

高密度等离子体(HDP) CVD由于其具有良好的阻水和空隙填充能力而引起了人们的极大兴趣。在HDPCVD中,通过施加衬底偏压,沉积和溅射蚀刻同时发生[1]。此外,HDPCVD氧化物的压缩应力有望补偿金属薄膜的拉伸应力。然而,我们最近的工作表明,在金属图案晶圆上沉积HDPCVD氧化物增加了晶圆的绝对弯曲值。本文结合实验结果,介绍了HDPCVD氧化物在金属图案上的异常应力行为。用AI-O在晶圆上绘制金属图案。采用金属图案密度分别为47%、71%和88%的光掩膜对600014和1400014的S%Cu薄膜进行了分光。测量了HDPCVD氧化物沉积后晶圆弯曲的大小与氧化物厚度的关系。研究了HDPCVD氧化物在多晶硅表面的应力行为。在AMT CENTURA上沉积HDPCVD氧化物,并通过FIX 2900测量晶圆弯曲的大小。发现AI-O的沉积增加了晶圆弯曲的幅度。S%Cu金属薄膜,当晶圆片的金属膜被图像化后变得更小,并且图像化后的晶圆弯曲的最终值与图案密度成正比。因此,图像化后的晶圆弯曲大小表示为[2]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The Mechanism Of An Abnormal Stress Behavior Of HDPCVD Oxides On Metal-Patterned Wafer
High-density plasma (HDP) CVD has been of great interests in past several years since it produces higheir density films with good water blocking and gap-filling capability. In HDPCVD, deposition and sputter etching occur simultaneously by applying a substrate bias [I]. In addition, the compressive stress of HDPCVD oxide is expected to compensate the tensile stress of metal film. Our recent work, however, shows that the deposition of HDPCVD oxide on metalpatterned wafer increased the absolute bow value of the wafer. In this paper, an abnormal stress behavior of HDPCVD oxide on metal pattern is presented with the experimental results. Metal patterning on the wafers with AI-O.S%Cu films of 600014 or 1400014, was splited by photomasks with different metal pattern density of 47%, 71% and 88%. The magnitude of wafer bow after the deposition of HDPCVD oxide was measured as a function of oxide thickness. The stress behavior of the HDPCVD oxide on poly-Si pattern was also investigated. HDPCVD oxide was deposited alt AMT CENTURA, and the magnitude of wafer bow was meausred by FIX 2900. It is found that the magnitude of wafer bow, increased by the deposition of AI-O.S%Cu metal film, becomes smaller when the metal film of the wafer is patterned, and the final value of wafer bow after the patterning is proportional to the pattern density. Therefore, the magnitude of wafer bow after patterning is expressed as follow [2].
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