低关断开关能量1200v IGBT模块

Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344) Pub Date : 2002-12-10 DOI:10.1109/IAS.2002.1043831

J. Yamada, Y. Yu, Y. Ishimura, J. Donlon, E. Motto

{"title":"低关断开关能量1200v IGBT模块","authors":"J. Yamada, Y. Yu, Y. Ishimura, J. Donlon, E. Motto","doi":"10.1109/IAS.2002.1043831","DOIUrl":null,"url":null,"abstract":"A new 5th generation IGBT module with low turn-off energy has been developed. The module utilizes IGBT chips optimized for high frequency industrial power supplies in applications such as X-ray, MRI (magnetic resonance imaging), and induction heating. This technology is designed to provide a simplified cost effective alternative to parallel discrete MOSFETs in these applications.","PeriodicalId":202482,"journal":{"name":"Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Low turn-off switching energy 1200 V IGBT module\",\"authors\":\"J. Yamada, Y. Yu, Y. Ishimura, J. Donlon, E. Motto\",\"doi\":\"10.1109/IAS.2002.1043831\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new 5th generation IGBT module with low turn-off energy has been developed. The module utilizes IGBT chips optimized for high frequency industrial power supplies in applications such as X-ray, MRI (magnetic resonance imaging), and induction heating. This technology is designed to provide a simplified cost effective alternative to parallel discrete MOSFETs in these applications.\",\"PeriodicalId\":202482,\"journal\":{\"name\":\"Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IAS.2002.1043831\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.2002.1043831","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

研制了一种低关断能量的新型第五代IGBT模块。该模块采用IGBT芯片，针对x射线、MRI(磁共振成像)和感应加热等应用中的高频工业电源进行了优化。该技术旨在为这些应用中的并联离散mosfet提供一种简化的经济有效的替代方案。

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Low turn-off switching energy 1200 V IGBT module

A new 5th generation IGBT module with low turn-off energy has been developed. The module utilizes IGBT chips optimized for high frequency industrial power supplies in applications such as X-ray, MRI (magnetic resonance imaging), and induction heating. This technology is designed to provide a simplified cost effective alternative to parallel discrete MOSFETs in these applications.

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Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)

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