R. Magno, J. B. Boos, P. Campbell, B. R. Bennett, E. Glaser, B. Tinkham, M. Ancona, K. Hobart, Doe Park, N. Papanicolaou
{"title":"InAlAsSb/InGaSb双异质结双极晶体管","authors":"R. Magno, J. B. Boos, P. Campbell, B. R. Bennett, E. Glaser, B. Tinkham, M. Ancona, K. Hobart, Doe Park, N. Papanicolaou","doi":"10.1049/EL:20058107","DOIUrl":null,"url":null,"abstract":"In this paper we report on the development of an npn double bipolar transistor with an InGaSb base and InAlAsSb alloys for the emitter and collector. The combination of alloys with a lattice constant of 6.2 a is illustrated. Silvaco simulation indicate that large collector currents, I/sub c/, are possible with this system at smaller base emitter voltages, V/sub BE/, than are measured in the InP based HBT. An important advantage of this system is that the conduction band offset between the InGaSb base and the InAlAsSb may be tuned over a large range while maintaining large valence band offsets that are useful for minimizing parasitic base currents.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"InAlAsSb/InGaSb double heterojunction bipolar transistor\",\"authors\":\"R. Magno, J. B. Boos, P. Campbell, B. R. Bennett, E. Glaser, B. Tinkham, M. Ancona, K. Hobart, Doe Park, N. Papanicolaou\",\"doi\":\"10.1049/EL:20058107\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we report on the development of an npn double bipolar transistor with an InGaSb base and InAlAsSb alloys for the emitter and collector. The combination of alloys with a lattice constant of 6.2 a is illustrated. Silvaco simulation indicate that large collector currents, I/sub c/, are possible with this system at smaller base emitter voltages, V/sub BE/, than are measured in the InP based HBT. An important advantage of this system is that the conduction band offset between the InGaSb base and the InAlAsSb may be tuned over a large range while maintaining large valence band offsets that are useful for minimizing parasitic base currents.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/EL:20058107\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/EL:20058107","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper we report on the development of an npn double bipolar transistor with an InGaSb base and InAlAsSb alloys for the emitter and collector. The combination of alloys with a lattice constant of 6.2 a is illustrated. Silvaco simulation indicate that large collector currents, I/sub c/, are possible with this system at smaller base emitter voltages, V/sub BE/, than are measured in the InP based HBT. An important advantage of this system is that the conduction band offset between the InGaSb base and the InAlAsSb may be tuned over a large range while maintaining large valence band offsets that are useful for minimizing parasitic base currents.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
