侧面效应对微波场效应管直流和交流性能影响的实验证据

H. Chen, G. Huang
{"title":"侧面效应对微波场效应管直流和交流性能影响的实验证据","authors":"H. Chen, G. Huang","doi":"10.1109/COMMAD.1998.791623","DOIUrl":null,"url":null,"abstract":"We report the investigation of mesa-sidewall effects on the DC and AC performance for conventional GaAs FETs. A great number of devices with different number of mesa-sidewalls were successfully fabricated and compared Experimental measurements including DC and AC performance indicate that the mesa sidewall really plays an important role on the device performance.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Experimental evidence of side-wall effects on microwave-FET DC and AC performances\",\"authors\":\"H. Chen, G. Huang\",\"doi\":\"10.1109/COMMAD.1998.791623\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the investigation of mesa-sidewall effects on the DC and AC performance for conventional GaAs FETs. A great number of devices with different number of mesa-sidewalls were successfully fabricated and compared Experimental measurements including DC and AC performance indicate that the mesa sidewall really plays an important role on the device performance.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791623\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791623","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

我们报告了对传统GaAs场效应管直流和交流性能的台面-侧壁效应的研究。我们成功地制作了大量具有不同数量的平台侧壁的器件,并对其进行了比较。直流和交流性能的实验测量表明,平台侧壁对器件的性能确实起着重要的作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental evidence of side-wall effects on microwave-FET DC and AC performances
We report the investigation of mesa-sidewall effects on the DC and AC performance for conventional GaAs FETs. A great number of devices with different number of mesa-sidewalls were successfully fabricated and compared Experimental measurements including DC and AC performance indicate that the mesa sidewall really plays an important role on the device performance.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信