侧面效应对微波场效应管直流和交流性能影响的实验证据

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791623

H. Chen, G. Huang

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引用次数: 0

摘要

我们报告了对传统GaAs场效应管直流和交流性能的台面-侧壁效应的研究。我们成功地制作了大量具有不同数量的平台侧壁的器件，并对其进行了比较。直流和交流性能的实验测量表明，平台侧壁对器件的性能确实起着重要的作用。

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Experimental evidence of side-wall effects on microwave-FET DC and AC performances

We report the investigation of mesa-sidewall effects on the DC and AC performance for conventional GaAs FETs. A great number of devices with different number of mesa-sidewalls were successfully fabricated and compared Experimental measurements including DC and AC performance indicate that the mesa sidewall really plays an important role on the device performance.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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