{"title":"一种0.5-8.5 GHz全差分CMOS射频分布式放大器","authors":"Hee-Tae Ahn, D. Allstot","doi":"10.1109/SSMSD.2000.836456","DOIUrl":null,"url":null,"abstract":"A fully-differential four-stage distributed amplifier (DA) with 5.5 dB gain and 8.5 GHz bandwidth has been integrated in 1.3 mm/spl times/2.2 mm in a 0.6 /spl mu/m digital CMOS process. The DA dissipates 216 mW from a single 3 V supply. A custom CAD tool was used to optimize the DA design including device and package parasitics.","PeriodicalId":166604,"journal":{"name":"2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 0.5-8.5 GHz fully-differential CMOS RF distributed amplifier\",\"authors\":\"Hee-Tae Ahn, D. Allstot\",\"doi\":\"10.1109/SSMSD.2000.836456\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully-differential four-stage distributed amplifier (DA) with 5.5 dB gain and 8.5 GHz bandwidth has been integrated in 1.3 mm/spl times/2.2 mm in a 0.6 /spl mu/m digital CMOS process. The DA dissipates 216 mW from a single 3 V supply. A custom CAD tool was used to optimize the DA design including device and package parasitics.\",\"PeriodicalId\":166604,\"journal\":{\"name\":\"2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-02-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SSMSD.2000.836456\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSMSD.2000.836456","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.5-8.5 GHz fully-differential CMOS RF distributed amplifier
A fully-differential four-stage distributed amplifier (DA) with 5.5 dB gain and 8.5 GHz bandwidth has been integrated in 1.3 mm/spl times/2.2 mm in a 0.6 /spl mu/m digital CMOS process. The DA dissipates 216 mW from a single 3 V supply. A custom CAD tool was used to optimize the DA design including device and package parasitics.