掺杂钴的二氧化钛薄膜的温度诱导相变研究

V. Pant, Sumit Sharma, Shweta Khurana, Mukesh Kumar, Amanpal Singh, D. Kumar
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引用次数: 1

摘要

采用溶胶-凝胶法制备了不同Co体积比(x = 0.0、0.05、0.1、0.15、0.2)的Co (III)掺杂二氧化钛(Ti1- xCoxO2)薄膜。x射线衍射图显示,薄膜沉积有非晶相、锐钛矿相和金红石相。这些相受退火温度和掺杂谱的影响很大。经500℃退火,结构由非晶态转变为锐钛矿态。在600 ~ 700℃范围内观察到由锐钛矿到金红石的相变。然而,随着Co的掺杂导致相变温度延长至700℃。利用TiO2(101)峰的Scherrer公式,从TiO2(200)、TiO2(101)峰和晶粒尺寸计算出晶格常数a和c,这些参数随着退火温度的升高而增大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A study of temperature induced phase transformations in Cobalt doped titanium dioxide thin films
Co (III) doped titanium dioxide (Ti1- xCoxO2) thin films with different Co volume ratios (x = 0.0, 0.05, 0.1, 0.15, 0.2) were successfully deposited using Sol-Gel route. X-ray Diffraction patterns revealed that the films were deposited with amorphous, anatase and rutile phases. These phases strongly influenced by annealing temperatures and doping profiles. By annealing at 500°C, the structure has changed from amorphous to the anatase crystalline state. The phase transformation from anatase to rutile was observed in the temperature range 600-700°C. However, with the doping of Co resulted in extended phase transformation temperature upto 700 °C. The lattice constants `a' and `c' were calculated from TiO2 (200), TiO2 (101) peaks and grain size using the Scherrer's formula for TiO2 (101) peak and these parameters increased with increasing the annealing temperature.
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