M. Yang, V. Chan, S. Ku, M. Ieong, L. Shi, K. Chan, C. Murthy, R. Mo, H.S. Yang, E. A. Lehner, Y. Surpris, F. Jamin, P. Oldiges, Y. Zhang, B. To, J. Holt, S. Steen, M. Chudzik, D. Fried, K. Bernstein, H. Zhu, C. Sung, J. Ott, D. Boyd, N. Rovedo
{"title":"杂化晶体取向CMOS集成研究","authors":"M. Yang, V. Chan, S. Ku, M. Ieong, L. Shi, K. Chan, C. Murthy, R. Mo, H.S. Yang, E. A. Lehner, Y. Surpris, F. Jamin, P. Oldiges, Y. Zhang, B. To, J. Holt, S. Steen, M. Chudzik, D. Fried, K. Bernstein, H. Zhu, C. Sung, J. Ott, D. Boyd, N. Rovedo","doi":"10.1109/VLSIT.2004.1345455","DOIUrl":null,"url":null,"abstract":"Design and integration issues have been investigated for the hybrid orientation technology (HOT), i.e. device isolation, epitaxy and dopant implantation. Ring oscillators using HOT CMOS have been demonstrated for the first time, with L/sub poly/ about 85nm and t/sub ox/=2.2nm, resulting in 21% improvement compared with control CMOS on (100) orientations.","PeriodicalId":297052,"journal":{"name":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"38","resultStr":"{\"title\":\"On the integration of CMOS with hybrid crystal orientations\",\"authors\":\"M. Yang, V. Chan, S. Ku, M. Ieong, L. Shi, K. Chan, C. Murthy, R. Mo, H.S. Yang, E. A. Lehner, Y. Surpris, F. Jamin, P. Oldiges, Y. Zhang, B. To, J. Holt, S. Steen, M. Chudzik, D. Fried, K. Bernstein, H. Zhu, C. Sung, J. Ott, D. Boyd, N. Rovedo\",\"doi\":\"10.1109/VLSIT.2004.1345455\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Design and integration issues have been investigated for the hybrid orientation technology (HOT), i.e. device isolation, epitaxy and dopant implantation. Ring oscillators using HOT CMOS have been demonstrated for the first time, with L/sub poly/ about 85nm and t/sub ox/=2.2nm, resulting in 21% improvement compared with control CMOS on (100) orientations.\",\"PeriodicalId\":297052,\"journal\":{\"name\":\"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"38\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2004.1345455\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2004.1345455","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the integration of CMOS with hybrid crystal orientations
Design and integration issues have been investigated for the hybrid orientation technology (HOT), i.e. device isolation, epitaxy and dopant implantation. Ring oscillators using HOT CMOS have been demonstrated for the first time, with L/sub poly/ about 85nm and t/sub ox/=2.2nm, resulting in 21% improvement compared with control CMOS on (100) orientations.
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